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Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation - ScienceDirect
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N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator - ScienceDirect
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Crystals | Free Full-Text | The Role of Substitution in the Apex Position of the Bent-Core on Mesomorphic Properties of New Series of Liquid Crystalline Materials | HTML
Different diameters of titanium dioxide nanotubes modulate Saos-2 osteoblast-like cell adhesion and osteogenic differentiation and nanomechanical properties of the surface - RSC Advances (RSC Publishing)
Heterogeneously integrated flexible microwave amplifiers on a cellulose nanofibril substrate
